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The gas is most commonly used in the production of [[semiconductor]] [[circuits]] and [[circuit boards]], through the process of [[chemical vapor deposition]].<ref name="chemvap">Kirss, Rein U., Lamartine Meda. "Chemical Vapor Deposition of Tungsten Oxide." ''Applied Organometallic Chemistry'' 12 (1998): 155–160.</ref>
--[[User:208.189.200.2|208.189.200.2]] 00:28, 22 July 2007 (UTC)==Industrial Synthesis==
'''Tungsten hexafluoride''' of a purity high enough for [[semiconductor]] [[CVD]] is produced by the reaction of [[fluorine]]
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|} [[tungsten]] metal. The metal is placed in a heated reactor, slightly pressurized to 1.2 to 2.0 psi, with a constant flow of WF<sub>6</sub> infused with a small amount of [[fluorine]] gas.<ref name="synth1">[http://www.patentstorm.us/patents/6544889.html Patent Storm]</ref>
==Reactions==
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