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Line 6: == Cryogenic process == In cryo-DRIE, the wafer is chilled to −110 °C (163 [[kelvin\|K]]). The low temperature slows down the [[chemical reaction]] that produces isotropic etching. However, [[ion]]s continue to bombard upward-facing surfaces and etch them away. This process produces trenches with highly vertical sidewalls. == Bosch process ==

Deep reactive-ion etching: Difference between revisions