Revision as of 06:59, 21 May 2008 edit Phactotum (talk \| contribs) 13 edits m →Cryogenic process ← Previous edit		Revision as of 03:36, 24 May 2008 edit undo Phactotum (talk \| contribs) 13 edits →Applications: unnecessary word Next edit →
Line 24: What distinguishes DRIE from RIE is etch depth: Practical etch depths for RIE (as used in [[integrated circuit\|IC]] manufacturing)would be limited to around 10µm at a rate up to 1µm/min, while DRIE can etch featues much greater, up to 600µm or more with rates up to 20µ/min. DRIE of glass requires high plasma power, which makes it difficult to find suitable mask materials for truly deep etching. Polysilicon and nickel are used ~~successfully~~ for 10–50 µm etched depths. In DRIE of polymers, Bosch process with alternating steps of oxygen etching and C<sub>4</sub>F<sub>8</sub> passivation take place. Metal masks can be used. [[Category:Semiconductor device fabrication]]

Deep reactive-ion etching: Difference between revisions