Deep reactive-ion etching: Difference between revisions

Revision as of 15:33, 28 August 2008

Revision as of 15:04, 13 November 2008

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What distinguishes DRIE from RIE is etch depth: Practical etch depths for RIE (as used in [[integrated circuit|IC]] manufacturing)would be limited to around 10µm at a rate up to 1µm/min, while DRIE can etch featues much greater, up to 600µm or more with rates up to 20µ/min.

DRIE of glass requires high plasma power, which makes it difficult to find suitable mask materials for truly deep etching. Polysilicon and nickel are used for 10–50 µm etched depths. In DRIE of polymers, Bosch process with alternating steps of oxygenSF₆ etching and C₄F₈ passivation take place. Metal masks can be used however are expensive to use in that several additional photo and deposition steps are always required. Metal masks are not necessary however on various substrates (Si [up to 800 µm], InP [up to 40 µm] or glass [up to 12 µm]) if using chemically amplified negative resists from providers such as Futurrex, Inc. or others.

[[Category:Semiconductor device fabrication]]