Deep reactive-ion etching: Difference between revisions

Revision as of 03:29, 1 November 2005

Revision as of 13:00, 18 November 2005

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The process is repeated many times over resulting in a large number of very small [[isotropic]] etch steps taking place only at the bottom of the etched pits. It is this selectivity that leads to the overall anisotropy of the process and the creation of high aspect ratio channels with vertical sidewalls.

[[Category:Semiconductor device fabrication]]

[[category:semiconductors]]