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DRIE of glass requires high plasma power, which makes it difficult to find suitable mask materials for truly deep etching. Polysilicon and nickel are used for 10–50 µm etched depths. In DRIE of polymers, Bosch process with alternating steps of SF<sub>6</sub> etching and C<sub>4</sub>F<sub>8</sub> passivation take place. Metal masks can be used however are expensive to use in that several additional photo and deposition steps are always required. Metal masks are not necessary however on various substrates (Si [up to 800 µm], InP [up to 40 µm] or glass [up to 12 µm]) if using chemically amplified negative resists from providers such as Futurrex, Inc. or others.
==See also==
*[[Reactive-ion etching]]
[[Category:Semiconductor device fabrication]]
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