Optical modulators using semiconductor nano-structures: Difference between revisions

Revision as of 13:37, 3 June 2009

Revision as of 13:39, 3 June 2009

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This device was fabricated a shape of the p-i-n [[ring resonator]] on a [[silicon-on-insulator]] substrate with a 3-mm-thick buried oxide layer. Both the waveguide coupling to the ring and that forming the ring have awidth of 450 nm and a height of 250 nm. The diameter of the ring is 12 mm, and the spacing between the ring and the straight waveguide is 200 nm.

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Acoustic solitons strongly influence the electron states in a semiconductor nanostructure. The amplitude of soliton pulses is so high that the electron states in a quantum well make temporal excursions in energy up to 10 meV. The subpicosecond duration of the solitons is less than the coherence time of the optical transition between the electron states and a frequency modulation of emitted light during the coherence time ([[chirping effect]]) is observed. This system is for an ultrafast control of electron states in semiconductor nanostructures.

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* from THORLABS

Mach-40™ 027/066: 40 Gb/s [[Phase Modulator]]

The 40 Gb/s [[Phase Modulator]] is a high performance, low drive voltage External Optical Modulator designed for customers developing next generation 40G transmission systems. The increased bandwidth allows for chirp control in high-speed data communications.

Applications ; Chirp Control for High-Speed Communications (SONET OC-768 Interfaces, SDH STM-256 Interfaces), Coherent communications, C & L Band Operation, Optical Sensing, All-optical frequency shifting.