Revision as of 16:56, 16 June 2009 edit Keberster (talk \| contribs) 149 edits No edit summary ← Previous edit		Revision as of 16:57, 16 June 2009 edit undo Keberster (talk \| contribs) 149 edits →Background Next edit →
Line 8: == Background == The Turn-OFF switching transient of [[~~Silicon~~silicon]] -based power bipolar semiconductor devices, caused by stored charge in the device during the forward conduction state, is known to limit the device switching speed. This in turn limits the efficiency of the application it is used within. Different techniques such as carrier lifetime control, injection efficiency and buffer layer devices have been used to minimize this, but all result in a trade-off between the ON-state loss and switching speed. == Details of the Technique ==

Current injection technique: Difference between revisions