Content deleted Content added
→Saturation explanation error?: Appears to be some confusiona bout where the carriers start. It's not that more come from inversion toward drain; it's that fewer move from drain to inversion. |
Codegrinder (talk | contribs) →NOMFET: new section |
||
Line 303:
Yes, there is a problem. "Mode" of a FET as described above is related to the POLARITY of the voltage applied to the gate with respect to source, or more accurately with respect to the gate to channel junction. All FETs have ohmic contacts at both drain and source by definition, any doping that may be there is there to ENHANCE the ohmic nature and process or design specific not a general feature.--[[User:Hudavendigar|Murat]] ([[User talk:Hudavendigar|talk]]) 19:29, 22 November 2009 (UTC)
== NOMFET ==
Perhaps the brand new NOMFET (nanoparticle organic memory field-effect transistor) should be added.
<br />See: http://www.physorg.com/news183373216.html
<br />
[[User:Codegrinder|Codegrinder]] ([[User talk:Codegrinder|talk]]) 21:56, 1 February 2010 (UTC)
| |||