Current injection technique: Difference between revisions

Revision as of 08:41, 15 March 2010

Revision as of 08:27, 5 December 2010

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{{Wikify|date=June 2009}}

The '''current injection technique''' is a technique developed to reduce the turn-OFF switching transient of power bipolar [[semiconductor]] devices. It was developed and published by Dr S. Eio of [[Staffordshire University]] ([[United Kingdom]]) in 2007.

== Background ==

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== Details of the Technique ==

The current injection technique examined in Dr Eio's publications optimize the switching transient of power [[Diode|diodesdiode]]s, [[Thyristor|thyristorsthyristor]]s and [[Insulated Gate Bipolar Transistor|insulated gate bipolar transistors]] (IGBTs) without the need of changing the structure of these devices. To implement the current injection technique, [[Electric current|current]] injection circuit was developed with results indicating that the injection of an additional current during its switching transient can reduce the reverse recovery charge of a given power diode and [[Thyristors|thyristor]], and also reduce the tail current of [[Insulated Gate Bipolar Transistor|insulated gate bipolar transistors]].

Practical experimental results on [[Diode|diodesdiode]]s and [[Thyristor|thyristorsthyristor]]s showed that the amplitude of the injected current required is proportional to the peak reverse recovery current and proved that these devices experience a momentary increase in recombination of current carriers during the injection of the additional current. This help to prevent the device from conducting large negative current, which in turn reduce its reverse recovery charge and reverse recovery time. Results obtained from experiments with [[insulated gate bipolar transistor]] showed a significant reduction in the time where current falls to zero when opposing current was injected into the device during its turn-off transient. Further simulation results from numerical modeling showed that the injected opposing current temporary increase [[Carrier generation and recombination|recombination]] in the device and therefore reduce the extracted excess carriers that stored within the device.

To prevent circuit commutation and bonding between the current injection circuit and the main test circuit where the [[device under test]] (DUT) is connected to, non-invasive circuit was developed to magnetically couple the two circuits.

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1.S. Eio., N. Shammas., “IGBT Tail Current Reduction by Current Injection,” 43rd International Universities Power Engineering Conference, Padova, Italy,1 – 4 September 2008

2.S. Eio., N. Shammas., “A chopper circuit with current injection technique for increasing operating frequency,” 9th International Seminar On Power Semiconductors, Prague, Czech Republic, 27-2927–29 August 2008

3.S. Eio., N. Shammas., “Switching Transient of Power Diode,” 41st International Universities Power Engineering Conference, Newcastle, United Kingdom, 6 - 86–8 September 2006, Volume 2, P. 564 – 568, Digital Object Identifier 10.1109 / UPEC.2006.367541

4.N. Shammas., S. Eio., “A Novel Technique to Reduce the Reverse Recovery Charge of a Power Diode,” 12th European Power Electronics and Applications, EPE 2007, Aalborg, Denmark, 2 - 52–5 September. 2007 P.1 – 8, Digital Object Identifier 10.1109 / EPE.2007.4417713

5.N. Shammas., S. Eio., “A Novel Technique to Reduce the Reverse Recovery Charge of a Power Thyristor,” 42nd International Universities Power Engineering Conference, Brighton, United Kingdom, 4 – 6 September 2007, p.1222 – 1227 1222–1227, Digital Object Identifier 10.1109 / UPEC.2007.4469126

6.N. Shammas., S. Eio., D. Chamund., “Semiconductor Devices and Their Use in Power Electronic Applications,” World Scientific and Eng. Academy and Society, Venice, Italy, 21 -23 Nov 2007

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7.N.Shammas, S.Eio, S.Nathan, K.Shukry, D.Chamund., “Thermal Aspects of Power Semiconductor Devices and Systems,” VII Conference Thermal Problems in Electronics, MicroTherm’07, 24 – 28 June 2007, Lodz, Poland

[[Category:Semiconductors| ]]

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[[Category:Semiconductors| ]]