Field-effect transistor: Difference between revisions

Revision as of 07:12, 5 September 2011

Revision as of 07:25, 5 September 2011

Line 10:

The principle of field-effect transistors was first patented by [[Julius Edgar Lilienfeld]] in 1925 and by [[Oskar Heil]] in 1934, but practical semi-conducting devices (the [[JFET]], junction gate field-effect transistor) were only developed much later after the [[transistor]] effect was observed and explained by the team of [[William Shockley]] at [[Bell Labs]] in [[1947]]. The [[MOSFET]] (metal–oxide–semiconductor field-effect transistor), which largely superseded the JFET and had a more profound effect on electronic development, was first proposed by Dawon Kahng in 1960.<ref>http://www.computerhistory.org/semiconductor/timeline/1960-MOS.html</ref>

==Basic information==

[[File:Basic analogy.png|thumb|basic analogy]]

[[File:Basic JFET.png|thumb|Simplified structure of a JFET]]

[[File:Actual JFET.png|thumb|Actual structure of A JFET a)dualgated,b)single gated]]

<ref>http://commons.wikimedia.org/wiki/File:Basic_JFET.png</ref>

<ref>http://commons.wikimedia.org/wiki/File:Actual_JFET.png</ref>

<ref>http://commons.wikimedia.org/wiki/File:Basic_analogy.png</ref>

== Terminals ==