Revision as of 13:46, 8 October 2011 edit PrathameshD.elec (talk \| contribs) 119 edits added 1 application ← Previous edit		Revision as of 12:44, 9 October 2011 edit undo Niteshns.elec (talk \| contribs) 11 edits →FET operation Next edit →
Line 69: \|title=MOSFET modeling for circuit analysis and design \|year= 2007 * <math>I_DSS</math> is the maximum drain current for JFET ,defined by the condition <math>V_GS</math>=0 and <math>V_DS<math>>\|<math>V_P</math>\|. \|pages=83 \|publisher=World Scientific

Field-effect transistor: Difference between revisions