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Basic information
FETs are majority-charge-carrier devices. The device consists of an active channel through which majority charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to semiconductor through ohmic contacts. The conductivity of the channel is a function of potential applied to the gate.[2][3]
The FET's three terminals are:[4]
Source (S), through which the majority carriers enter the channel. Conventional current entering the channel at S is designated by IS.
Drain (D), through which the majority carriers leave the channel. Conventional current entering the channel at D is designated by ID. Drain to Source voltage is VDS.
Gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control ID.
<ref>http://commons.wikimedia.org/wiki/File:Basic_JFET.png</ref><ref>http://commons.wikimedia.org/wiki/File:Actual_JFET.png</ref>
The FET's three terminals are:<ref name=millman>
{{cite book
|author=Millman
|title=Electronic devices and circuits
|year=1985
|pages=384–385
|publisher=McGraw-Hill international book company
|___location=Singapore
|isbn=0-07-Y85505-6}}
</ref>
==FET amplifier==
==INTRODUCTION==
The main advantage of FET is used for amplification is that it has very high input impedance.
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