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==Basic information==
FETs are majority-charge-carrier devices. The device consists of an active channel through which majority charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to semiconductor through ohmic contacts. The conductivity of the channel is a function of potential applied to the gate.
The FET's three terminals are:
Source (S), through which the majority carriers enter the channel. Conventional current entering the channel at S is designated by IS.
Drain (D), through which the majority carriers leave the channel. Conventional current entering the channel at D is designated by ID. Drain to Source voltage is VDS.
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