Content deleted Content added
→Types of field-effect transistors: added two types of MOSFET |
|||
Line 132:
* The '''[[MODFET]]''' (Modulation-Doped Field Effect Transistor) uses a [[quantum well]] structure formed by graded doping of the active region.
* The '''[[MOSFET]]''' (Metal–Oxide–Semiconductor Field-Effect Transistor) utilizes an [[Electrical insulation|insulator]] (typically [[silicon dioxide|SiO<sub>2</sub>]]) between the gate and the body.
**Depletion type MOSFET
There are two n-type island on p-type substrate. Between these two n regions there is a n-channel.
The two n-regions form Source and Drain terminals. Gate terminal is to insulated layer of SiO2.
There is conduction without any Gate voltage.
[[File:MOSFET2.jpg|thumb|D MOSFET]]
<<ref>>{http://commons.wikimedia.org/wiki/File:MOSFET2.jpg}<</ref>>
**Enhancement type MOSFET
Similar to Depletion type , but without n-channel. Hence for conduction there is requirement of some positive Gate voltage which attracts electrons from p-region which conducts from Source to Drain.
[[File:MOSFET4.jpg|thumb|E MOSFET]]
<<ref>>{http://commons.wikimedia.org/wiki/File:MOSFET4.jpg}<</ref>>
<ref name=Prathamesh>
{{cite book
|author=Robert Boylestad
|title=Electronic devices and circuit theory
|year=2004
|publisher=Prentice Hall India
|___location=New Delhi
|ISBN-81-203-2064-6}}
</ref>
* The '''[[NOMFET]]''' is a Nanoparticle Organic Memory Field-Effect Transistor.[http://www.sciencedaily.com/releases/2010/01/100125122101.htm]
* The '''[[OFET]]''' is an Organic Field-Effect Transistor using an organic semiconductor in its channel.
| |||