Deep reactive-ion etching: Difference between revisions

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Revision as of 08:16, 5 April 2006

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'''Deep Reactive Ion Etching''' or '''DRIE''' is a highly [[anisotropic]] [[etching|etch]] process developed for [[MEMS]] (also known as microsystems[[microsystem]] technology) and used to create deep and high [[aspect ratio]] holes and trenches in [[silicon]] (and other materials). Widely used in [[MEMS]] applications like mechanical resonators and microfluidic channels as well as in [[capacitor]]s, structures with vertical sides and having [[aspect ratio]]s greater than 20:1 can be produced.

RIE "deepness" depends on application: in DRAM memory circuits capacitor trenches may be 10-20 micrometers deep, while in MEMS DRIE is used for anything from a few micrometers to 0.5 mm. What distinguishes DRIE from RIE is actually etch rate: while 1 micron/minute is reasonable etch rate for RIE (as used in IC manufacturing), DRIE rates are 5-10 microns per minute.