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A Single-Atom Transistor is a device that allows to open and close an electrical circuit by the controlled and reversible repositioning of one single atom. The Single-Atom Transistor was invented and first demonstrated in 2004 by Prof. Thomas Schimmel and his team of scientists at the [[Karlsruhe Institute of Technology]] (former University of Karlsruhe).<ref> F.-Q. Xie, L. Nittler, Ch. Obermair, Th. Schimmel, Phys. Rev. Lett.93, 128303 (2004)</ref> By means of a small electrical voltage applied to a control electrode, the so-called Gate electrode, a single atom is reversibly moved in and out of a tiny junction, in this way closing and opening an electrical contact.
and reproducible repositioning of one single atom. It is invented in Karlsruhe (Germany) at the [[Karlsruhe Institute of Technology]] (KIT).<ref> F.-Q. Xie, L. Nittler, Ch. Obermair, Th. Schimmel, Phys. Rev. Lett.93, 128303 (2004)</ref> <ref>F.-Q. Xie, Ch. Obermair and Th. Schimmel, Solid State Communications 132, 437 (2004)</ref> <ref> F.-Q. Xie, R. Maul, A. Augenstein, Ch. Obermair, E.B. Starikov, G. Schön, Th. Schimmel, W. Wenzel, Nano Lett. 8 (12),4493 (2008)</ref> <ref> F.-Q. Xie, R. Maul, Ch. Obermair, G. Schön, W. Wenzel, Th. Schimmel, Advanced Materials 22, 2033 (2010)</ref> <ref> Ch. Obermair, F.-Q. Xie, Th. Schimmel, Europhysics News 41/4, 25-28 (2010)</ref>▼
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At the same time, the device of the Karlsruhe team of researchers marks the lower limit of minaturization, as feature sizes smaller than one atom cannot be produced lithographically. The device represents a quantum transistor, the conductance of the Source-Drain channel being defined by the rules of quantum mechanics. It can be operated at room temperature and at ambient conditions, i.e. neither cooling nor vacuum are required. <ref> F.-Q. Xie, R. Maul, Ch. Obermair, G. Schön, W. Wenzel, Th. Schimmel, Advanced Materials 22, 2033 (2010)</ref>
== References ==
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