Current injection technique: Difference between revisions

Revision as of 18:18, 9 October 2011

Revision as of 09:51, 9 April 2012

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The '''current injection technique''' is a technique developed to reduce the turn-OFF switching transient of power bipolar [[semiconductor]] devices. It was developed and published by Dr S. Eio of [[Staffordshire University]] ([[United Kingdom]]) in 2007.

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== References ==

{{reflist}}

;Notes

*S. Eio., N. Shammas., “IGBT Tail Current Reduction by Current Injection,” 43rd International Universities Power Engineering Conference, Padova, Italy,1 – 4 September 2008

1.*S. Eio., N. Shammas., “IGBT“A Tailchopper Currentcircuit Reductionwith bycurrent Currentinjection Injectiontechnique for increasing operating frequency,” 43rd9th International UniversitiesSeminar PowerOn EngineeringPower ConferenceSemiconductors, PadovaPrague, Italy,1Czech –Republic, 427–29 SeptemberAugust 2008

5.N*S. ShammasEio., SN. EioShammas., “A“Switching Novel Technique to Reduce the Reverse Recovery ChargeTransient of a Power ThyristorDiode,” 42nd41st International Universities Power Engineering Conference, BrightonNewcastle, United Kingdom, 46–8 –September 62006, SeptemberVolume 20072, pP. 1222–1227 564 – 568, Digital Object Identifier 10.1109 / UPEC.20072006.4469126367541

2.S. Eio., N. Shammas., “A chopper circuit with current injection technique for increasing operating frequency,” 9th International Seminar On Power Semiconductors, Prague, Czech Republic, 27–29 August 2008

3.S*N. EioShammas., NS. ShammasEio., “Switching“A TransientNovel Technique to Reduce the Reverse Recovery Charge of a Power Diode,” 41st12th International UniversitiesEuropean Power EngineeringElectronics Conference,and NewcastleApplications, UnitedEPE Kingdom2007, 6–8 SeptemberAalborg, 2006Denmark, Volume2–5 2,September. 2007 P. 5641 – 5688, Digital Object Identifier 10.1109 / UPECEPE.20062007.3675414417713

4.*N. Shammas., S. Eio., “A Novel Technique to Reduce the Reverse Recovery Charge of a Power DiodeThyristor,” 12th42nd EuropeanInternational Universities Power ElectronicsEngineering andConference, ApplicationsBrighton, EPEUnited 2007Kingdom, Aalborg,4 Denmark,– 2–56 September. 2007, Pp.1 – 8 1222–1227, Digital Object Identifier 10.1109 / EPEUPEC.2007.44177134469126

*N. Shammas., S. Eio., D. Chamund., “Semiconductor Devices and Their Use in Power Electronic Applications,” World Scientific and Eng. Academy and Society, Venice, Italy, 21 -23 Nov 2007

5.N. Shammas., S. Eio., “A Novel Technique to Reduce the Reverse Recovery Charge of a Power Thyristor,” 42nd International Universities Power Engineering Conference, Brighton, United Kingdom, 4 – 6 September 2007, p. 1222–1227, Digital Object Identifier 10.1109 / UPEC.2007.4469126

6.*N. Shammas, S.Eio, S.Nathan, EioK.Shukry, D. Chamund., “Semiconductor“Thermal DevicesAspects andof TheirPower UseSemiconductor inDevices Power Electronicand ApplicationsSystems,” WorldVII ScientificConference andThermal Eng.Problems Academyin and SocietyElectronics, VeniceMicroTherm’07, Italy,24 21– -2328 NovJune 2007, Lodz, Poland

7.N.Shammas, S.Eio, S.Nathan, K.Shukry, D.Chamund., “Thermal Aspects of Power Semiconductor Devices and Systems,” VII Conference Thermal Problems in Electronics, MicroTherm’07, 24 – 28 June 2007, Lodz, Poland

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