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The '''mesa transistor''' was developed at [[Texas Instruments]] in 1957. These transistors were the first to have both diffused bases and diffused emitters.
Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to contamination, thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.
==Planar transistor==
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