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220 of Borg (talk | contribs) →Mesa transistor: + ref/2 cites re "edge of the collector–base junction was exposed ... " etc <ref name=spectrum-12-07/> |
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The '''mesa transistor''' was developed at [[Texas Instruments]] in 1957. These transistors were the first to have both diffused bases and diffused emitters.
Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to contamination,<ref name=spectrum-12-07>{{cite web| url=http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution| title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit| author=Michael, Riordan | work=IEEE Spectrum | date= December 2007 | accessdate= November 28, 2012| publisher=IEEE}}</ref> thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref name=spectrum-12-07/>
==Planar transistor==
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