Diffused junction transistor: Difference between revisions

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Mesa transistor: Cite needed re. mesa transistor' was developed at Texas Instruments in 1957" likely true, but can't find a source @ History of the transistor or even @ Texas Instruments
Mesa transistor: a source and what it has to say about Texas and mesa, etc.
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==Mesa transistor==
The '''mesa transistor''' was developed at [[Texas Instruments]] in 1957.{{cn|date= October 2012}} These transistors were the first to have both diffused bases and diffused emitters.
 
[[Texas Instruments]] made the first grown-junction silicon transistors in 1954.<ref>
Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to contamination,<ref name=spectrum-12-07>{{cite web| url=http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution| title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit| author=Michael, Riordan | work=IEEE Spectrum | date= December 2007 | accessdate= November 28, 2012| publisher=IEEE}}</ref> thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref name=spectrum-12-07/>
{{cite book
| title = Makers of the Microchip: A Documentary History of Fairchild Semiconductor
| author = Christophe Lécuyer and David C. Brock
| publisher = MIT Press
| year = 2010
| isbn = 9780262014243
| pages = 11
| url = http://books.google.com/books?id=LaZpUpkG70QC
}}</ref>
The diffused silicon '''mesa transistor''' was developed at [[Bell Labs]] in 1955 and made commercially available by [[Fairchild Semiconductor]] in 1958.<ref>
{{cite book
| title = Makers of the Microchip: A Documentary History of Fairchild Semiconductor
| author = Christophe Lécuyer and David C. Brock
| publisher = MIT Press
| year = 2010
| isbn = 9780262014243
| pages = 10–22
| url = http://books.google.com/books?id=LaZpUpkG70QC
}}</ref>
 
These transistors were the first to have both diffused bases and diffused emitters. Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to contamination,<ref name=spectrum-12-07>{{cite web| url=http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution| title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit| author=Michael, Riordan | work=IEEE Spectrum | date= December 2007 | accessdate= November 28, 2012| publisher=IEEE}}</ref> thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref name=spectrum-12-07/>
 
==Planar transistor==