Diffused junction transistor: Difference between revisions

Revision as of 02:41, 28 October 2012

Revision as of 20:11, 28 January 2013

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| year = 2010

| isbn = 9780262014243

| pages = 11

| url = http://books.google.com/books?id=LaZpUpkG70QC

}}</| ref> =harv

}}, p.&nbsp;11.</ref>

The diffused silicon '''mesa transistor''' was developed at [[Bell Labs]] in 1955 and made commercially available by [[Fairchild Semiconductor]] in 1958.<ref>{{Harvnb|||2010|pp=10–22}}</ref>

{{cite book

| title = Makers of the Microchip: A Documentary History of Fairchild Semiconductor

| author = Christophe Lécuyer and David C. Brock

| publisher = MIT Press

| year = 2010

| isbn = 9780262014243

| pages = 10–22

| url = http://books.google.com/books?id=LaZpUpkG70QC

}}</ref>

These transistors were the first to have both diffused bases and diffused emitters. Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to contamination, thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref name=spectrum-12-07>{{cite web| |url=http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution | title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit | authorfirst=Michael, |last=Riordan | work=IEEE Spectrum | date= December 2007 | accessdate= November 28, 2012 | publisher=IEEE}}</ref> thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref name=spectrum-12-07/>

==Planar transistor==