PHOSFOS: Difference between revisions

Revision as of 18:18, 7 March 2013

Revision as of 16:48, 2 October 2013

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The key areas where significant progress has been made are listed below:<ref>http://www.phosfos.eu/eng/Phosfos/Facts-Results</ref>

1. '''Silica [[Microstructured fiber]]s for temperature -insensitive optical sensors''' - a new pressure -sensitive and temperature -insensitive optical fibre sensor has been developed. The sensor uses a [[fiber Bragg grating]] written into a [[microstructured fiber]]. The pressure sensitivity exceeds the state-of-the-art with a factor of 20, whilst the sensor is truly temperature -insensitive. The sensor is based on a novel design of a highly birefringent (10⁻³) microstructured optical fibre sensor that is designed to have a high pressure sensitivity (3.3 pm/bar), whilst at the same time exhibit negligible temperature sensitivity (10⁻² pm/K). The fabrication method is compatible with conventional ultraviolet grating inscription setups for [[fiber Bragg grating]] manufacture. The temperature insensitivity was achieved by tailoring the design of the doped region in the core of the [[microstructured fiber]] via a series of design iterations.<ref>http://www.phosfos.eu/eng/Phosfos/Facts-Results/Fact-sheet-01-Silica-Microstructured-Optical-Fibre-Sensor</ref>

2. '''Embedded optoelectronic devices''' - the possibility to integrate optical sources and photodetectors, compatible with the optical fibre sensors has been developed within the PHOSFOS project. The optoelectronic components are thined down by polishing until they are only 20 μm thick so that they become flexible themselves without compromising functionality. Thin optical sources and detectors are then embedded in optical clear polymers, and electrically contacted using well-established micro- via, metallization and patterning technologies.<ref>http://www.phosfos.eu/eng/Phosfos/Facts-Results/Fact-Sheet-02-Embedded-Opto-electronic-Chips</ref>