Diffused junction transistor: Difference between revisions

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==Planar transistor==

[[Image:Npn bjt cross section.svg|thumb|250px|Simplified cross section of a planar ''npn'' bipolar junction transistor]]

The '''planar transistor''' was developed by Dr. [[Jean Hoerni]]<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_2N1613.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''FAIRCHILD 2N1613''']</ref> at [[Fairchild Semiconductor]] in 1959. The [[planar process]] used to make these transistors made mass -produced monolithic [[integrated circuit]]s possible.

These transistors have a silica [[passivation]] layer to protect the junction edges from contamination, making inexpensive plastic packaging possible without risking degradation of the transistor's characteristics over time.

The first planar transistors had much worse characteristics than [[alloy junction transistor]]s of the period, but as they could be mass -produced and alloy junction transistors could not, they cost much less and the characteristics of planar transistors improved very rapidly, quickly exceeding those of all earlier transistors and making earlier transistors obsolete.

==References==