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The full model introduces the virtual terminal B' so that the base spreading resistance ''r''<sub>bb</sub> (the bulk resistance between the base contact and the active region of the base under the emitter) and ''r''<sub>b'e</sub> (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately. ''C''<sub>e</sub> is the diffusion capacitance representing minority carrier storage in the base. The feedback components ''r''<sub>b'c</sub> and ''C''<sub>c</sub> are introduced to represent the [[Early effect]].<ref>Dhaarma Raj Cheruku, Battula Tirumala Krishna, ''Electronic Devices And Circuits'', pages 281-282, Pearson Education India, 2008 ISBN 8131700984.</ref>
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==MOSFET parameters==
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