Deep reactive-ion etching: Difference between revisions

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==Bosch process==

[[File:Bosch process PILLAR.jpg|thumb|alt=A silicon pillar fabricated using the Bosch process|A silicon micro-pillar fabricated using the Bosch process]]

The Bosch process, named after the German company [[Robert Bosch GmbH]] which patented the process,<ref>[http://www.freepatentsonline.com/5501893.html Basic Bosch process patent application]</ref><ref>[http://www.freepatentsonline.com/6531068.html Improved Bosch process patent application]</ref><ref>[http://www.freepatentsonline.com/6284148.html Bosch process "Parameter Ramping" patent application]</ref> also known as pulsed or time-multiplexed etching, alternates repeatedly between two modes to achieve nearly vertical structures.:

# A standard, nearly [[isotropy|isotropic]] [[plasma etch]]. The plasma contains some ions, which attack the wafer from a nearly vertical direction. [[Sulfur hexafluoride]] [SF₆] is often used for [[silicon]].