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→Applications: Added content: an example for novel uses of drie Tags: Mobile edit Mobile web edit |
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* in DRAM memory circuits, capacitor trenches may be 10–20 µm deep,
* in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm.
* in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes.<ref>{{cite journal | last1= Ghoneim | first1= Mohamed | last2 = Hussain | first2= Muhammad | title = Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics| journal= small | date= 1 February 2017 | url = http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201601801/full}}</ref>
What distinguishes DRIE from RIE is etch depth: Practical etch depths for RIE (as used in [[integrated circuit|IC]] manufacturing) would be limited to around 10 µm at a rate up to 1 µm/min, while DRIE can etch features much greater, up to 600 µm or more with rates up to 20 µm/min or more in some applications.
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