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* in DRAM memory circuits, capacitor trenches may be 10–20 µm deep,
* in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm.
* in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes.<ref>{{cite journal | last1= Ghoneim | first1= Mohamed | last2 = Hussain | first2= Muhammad | title = Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics| journal= small | date= 1 February 2017 | url = http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201601801/full}}</ref> <ref>{{cite news | last= Mendis | first= Lakshini | title= Lego-like Electronics | newspaper= Nature Middle East | date= 14 February 2017 | url=http://www.natureasia.com/en/nmiddleeast/article/10.1038/nmiddleeast.2017.34}}</ref>
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