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It remains questionable whether optical processing can reduce the energy required to switch a single transistor to be less than that for electronic transistors. To realistically compete, transistors requiring a few tens of photons per operation are required. It is clear, however, that this is achievable in proposed single-photon transistors<ref>{{Cite journal | doi = 10.1103/PhysRevLett.111.063601| title = Single-Photon Transistor in Circuit Quantum Electrodynamics| journal = Physical Review Letters| volume = 111| issue = 6| year = 2013| last1 = Neumeier | first1 = L. | last2 = Leib | first2 = M. | last3 = Hartmann | first3 = M. J. | bibcode=2013PhRvL.111f3601N | pmid=23971573 | page=063601| arxiv = 1211.7215}}</ref>
<ref>{{Cite journal | doi = 10.1103/PhysRevA.78.013812| title = Single-photon transistor using microtoroidal resonators| journal = Physical Review A| volume = 78| year = 2008| last1 = Hong | first1 = F. Y. | last2 = Xiong | first2 = S. J. | bibcode = 2008PhRvA..78a3812H}}</ref> for quantum information processing.
Perhaps the most significant advantage of optical over electronic logic is reduced power consumption. This comes from the absence of [[capacitance]] in the connections between individual [[logic gate]]s. In electronics, the transmission line needs to be charged to the [[signal voltage]]. The capacitance of a transmission line is proportional to its length and it exceeds the capacitance of the transistors in a logic gate when its length is equal to that of a single gate. The charging of transmission lines is one of the main energy losses in electronic logic. This loss is avoided in optical communication where only enough energy to switch an optical transistor at the receiving end must be transmitted down a line. This fact has played a major role in the uptake of fiber optics for long distance communication but is yet to be exploited at the microprocessor level.
Besides the potential advantages of higher speed, lower power consumption and high compatibility with optical communication systems, optical transistors must satisfy a set of benchmarks before they can compete with electronics.<ref>{{Cite journal | doi = 10.1038/nphoton.2009.240| url= http://ee.stanford.edu/~dabm/379.pdf|title = Are optical transistors the logical next step?| journal = Nature Photonics| volume = 4| pages = 3–5| year = 2010| last1 = Miller | first1 = D. A. B. | bibcode = 2010NaPho...4....3M}}</ref> No single design has yet satisfied all these criteria whilst outperforming speed and power consumption of state of the art electronics.
The criteria include:
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* [[electromagnetically induced transparency]]
** in an [[optical cavity]] or microresonator, where the transmission is controlled by a weaker flux of gate photons<ref>{{Cite journal | doi = 10.1126/science.1238169| pmid = 23828886| title = All-Optical Switch and Transistor Gated by One Stored Photon| journal = Science| volume = 341| issue = 6147| pages = 768–70| year = 2013| last1 = Chen | first1 = W.| last2 = Beck | first2 = K. M.| last3 = Bucker | first3 = R.| last4 = Gullans | first4 = M.| last5 = Lukin | first5 = M. D.| last6 = Tanji-Suzuki | first6 = H.| last7 = Vuletic | first7 = V.| arxiv = 1401.3194| bibcode = 2013Sci...341..768C}}</ref><ref>{{Cite journal | doi = 10.1364/JOSAB.30.001329| title = Microresonator-based all-optical transistor| journal = Journal of the Optical Society of America B| volume = 30| issue = 5| pages = 1329| year = 2013| last1 = Clader | first1 = B. D.| last2 = Hendrickson | first2 = S. M.| arxiv = 1210.0814| bibcode = 2013JOSAB..30.1329C}}</ref>
** in free space, i.e., without a resonator, by addressing strongly interacting [[Rydberg state]]s<ref>{{Cite journal | doi = 10.1103/PhysRevLett.113.053601| title = Single-Photon Transistor Mediated by Interstate Rydberg Interactions| journal = Physical Review Letters| volume = 113| issue = 5| year = 2014| last1 = Gorniaczyk | first1 = H.| last2 = Tresp | first2 = C.| last3 = Schmidt | first3 = J.| last4 = Fedder | first4 = H.| last5 = Hofferberth | first5 = S. | bibcode=2014PhRvL.113e3601G | pmid=25126918 | page=053601| arxiv = 1404.2876}}</ref><ref>{{Cite journal | doi = 10.1103/PhysRevLett.113.053602| title = Single-Photon Transistor Using a Förster Resonance| journal = Physical Review Letters| volume = 113| issue = 5| year = 2014| last1 = Tiarks | first1 = D. | last2 = Baur | first2 = S. | last3 = Schneider | first3 = K. | last4 = Dürr | first4 = S. | last5 = Rempe | first5 = G. | bibcode=2014PhRvL.113e3602T}}</ref>
* a system of indirect [[exciton]]s (composed of bound pairs of [[electrons]] and [[electron hole|holes]] in double [[quantum well]]s with a static [[Electric dipole moment|dipole moment]]). Indirect excitons, which are created by light and decay to emit light, strongly interact due to their dipole alignment.<ref>{{Cite journal | doi = 10.1063/1.4866855| title = Optically controlled excitonic transistor| journal = Applied Physics Letters| volume = 104| issue = 9| pages = 091101| year = 2014| last1 = Andreakou | first1 = P.| last2 = Poltavtsev | first2 = S. V.| last3 = Leonard | first3 = J. R.| last4 = Calman | first4 = E. V.| last5 = Remeika | first5 = M.| last6 = Kuznetsova | first6 = Y. Y.| last7 = Butov | first7 = L. V.| last8 = Wilkes | first8 = J.| last9 = Hanson | first9 = M.| last10 = Gossard | first10 = A. C.| arxiv = 1310.7842| bibcode = 2014ApPhL.104i1101A}}</ref><ref>{{Cite journal | doi = 10.1364/OL.35.001587| pmid = 20479817| title = All-optical excitonic transistor| journal = Optics Letters| volume = 35| issue = 10| pages = 1587–9| year = 2010| last1 = Kuznetsova | first1 = Y. Y.| last2 = Remeika | first2 = M.| last3 = High | first3 = A. A.| last4 = Hammack | first4 = A. T.| last5 = Butov | first5 = L. V.| last6 = Hanson | first6 = M.| last7 = Gossard | first7 = A. C.| bibcode = 2010OptL...35.1587K}}</ref>
* a system of microcavity polaritons ([[exciton-polaritons]] inside an [[optical microcavity]]) where, similar to exciton-based optical transistors, [[polariton]]s facilitate effective interactions between photons<ref>{{Cite journal | doi = 10.1038/ncomms2734| pmid = 23653190| title = All-optical polariton transistor| journal = Nature Communications| volume = 4| pages = 1778| year = 2013| last1 = Ballarini | first1 = D.| last2 = De Giorgi | first2 = M.| last3 = Cancellieri | first3 = E.| last4 = Houdré | first4 = R.| last5 = Giacobino | first5 = E.| last6 = Cingolani | first6 = R.| last7 = Bramati | first7 = A.| last8 = Gigli | first8 = G.| last9 = Sanvitto | first9 = D.
| arxiv = 1201.4071| bibcode = 2013NatCo...4E1778B}}</ref>
* [[photonic crystal]] cavities with an active Raman gain medium<ref>{{Cite journal | doi = 10.1103/PhysRevA.88.033847| title = All-optical transistor using a photonic-crystal cavity with an active Raman gain medium| journal = Physical Review A| volume = 88| issue = 3| year = 2013| last1 = Arkhipkin | first1 = V. G.| last2 = Myslivets | first2 = S. A.| bibcode = 2013PhRvA..88c3847A}}</ref>
* [[cavity switch]] modulates cavity properties in time ___domain for quantum information applications <ref>{{cite journal |last=Jin |first=C.-Y. |last2=Johne |first2=R. |last3=Swinkels |first3=M. |last4=Hoang |first4=T. |last5=Midolo |first5=L. |last6=van Veldhoven |first6=P.J. |last7=Fiore |first7=A. |date=Nov 2014 |title=Ultrafast non-local control of spontaneous emission |journal=Nature Nanotechnology |volume=9 |pages=886-890 |doi=10.1038/nnano.2014.190|arxiv=1311.2233 |bibcode=2014NatNa...9..886J }}</ref>.
* [[nanowire]]-based cavities employing polaritonic interactions for optical switching<ref>{{Cite journal | doi = 10.1038/nnano.2012.144| title = All-optical active switching in individual semiconductor nanowires| journal = Nature Nanotechnology| volume = 7| issue = 10| pages = 640–5| year = 2012| last1 = Piccione | first1 = B. | last2 = Cho | first2 = C. H. | last3 = Van Vugt | first3 = L. K. | last4 = Agarwal | first4 = R. | pmid=22941404| bibcode = 2012NatNa...7..640P}}</ref>
* silicon microrings placed in the path of an optical signal. Gate photons heat the silicon microring causing a shift in the optical resonant frequency, leading to a change in transparency at a given frequency of the optical supply.<ref>{{Cite book | doi = 10.1364/FIO.2012.FW6C.6| chapter = A Silicon Optical Transistor| title = Frontiers in Optics 2012/Laser Science XXVIII| pages = FW6C.FW66| year = 2012| last1 = Varghese | first1 = L. T. | last2 = Fan | first2 = L. | last3 = Wang | first3 = J. | last4 = Gan | first4 = F. | last5 = Wang | first5 = X. | last6 = Wirth | first6 = J. | last7 = Niu | first7 = B. | last8 = Tansarawiput | first8 = C. | last9 = Xuan | first9 = Y. | last10 = Weiner | first10 = A. M. | last11 = Qi | first11 = M. | isbn = 978-1-55752-956-5}}</ref>
* a dual-mirror optical cavity that holds around 20,000 [[cesium]] atoms trapped by means of optical tweezers and laser-cooled to a few [[microkelvin]]. The cesium ensemble did not interact with light and was thus transparent. The length of a round trip between the cavity mirrors equaled an integer multiple of the wavelength of the incident light source, allowing the cavity to transmit the source light. Photons from the gate light field entered the cavity from the side, where each photon interacted with an additional "control" light field, changing a single atom's state to be resonant with the cavity optical field, which changing the field's resonance wavelength and blocking transmission of the source field, thereby "switching" the "device". While the changed atom remains unidentified, [[quantum interference]] allows the gate photon to be retrieved from the cesium. A single gate photon could redirect a source field containing up to two photons before the retrieval of the gate photon was impeded, above the critical threshold for a positive gain.<ref>{{Cite journal | doi = 10.1126/science.1242905| pmid = 23950521| title = Triggering an Optical Transistor with One Photon| journal = Science| volume = 341| issue = 6147| pages = 725–6| year = 2013| last1 = Volz | first1 = J.| last2 = Rauschenbeutel | first2 = A.| bibcode = 2013Sci...341..725V}}</ref>
== See also ==
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