Deep reactive-ion etching: Difference between revisions

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m Bosch process: Make "Octafluorocyclobutane" be link to the article for that substance, like Sulfur hexaflouride in the line above
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# A standard, nearly [[isotropy|isotropic]] [[plasma etch]]. The plasma contains some ions, which attack the wafer from a nearly vertical direction. [[Sulfur hexafluoride]] [SF<sub>6</sub>] is often used for [[silicon]].
# Deposition of a chemically inert [[Passivation (chemistry)|passivation]] layer. (For instance, [[Octafluorocyclobutane]] [C<sub>4</sub>F<sub>8</sub> (Octafluorocyclobutane)] source gas yields a substance similar to [[Teflon]].)
 
[[File:Bosch process sidewall.jpg|thumb|alt=Undulating sidewall as a result of the Bosch process|Undulating sidewall of a silicon structure created using the Bosch process]]