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When [[David Thouless]] pointed out in 1977 that the size of a conductor, if made small enough, will affect the electronic properties of the conductor, a new subfield of condensed matter physics was started.<ref>{{cite journal |last1=Thouless |first1=David J. |authorlink=David J. Thouless| title=Maximum Metallic Resistance in Thin Wires |journal=Phys. Rev. Lett. |volume=39 |issue=18 |pages=1167-1169 |year=1977 |doi=10.1103/PhysRevLett.39.1167| url=https://link.aps.org/doi/10.1103/PhysRevLett.39.1167}}</ref> The research that followed during the 1980s was known as the mesoscopic physics, based on the submicron-size system investigated.<ref>{{cite journal|last1=Al'Tshuler|first1=Boris L.|last2=Lee|first2=Patrick A.|title=Disordered electronic systems|journal=Physics Today|volume=41|issue=12|year=1988|pages=36-44|doi=10.1063/1.881139}}</ref> This was the starting point of the research related to the single-electron transistor.
The first single-electron transistor based on the Coulomb blockade was reported in 1986 by Soviet scientists {{ill|K. K. Likharev|ru|Лихарев, Константин Константинович}} and D. V. Averin.<ref name=":1">{{Cite journal|last=Averin|first=D. V.|last2=Likharev|first2=K. K.|date=1986-02-01|title=Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions|journal=Journal of Low Temperature Physics|language=en|volume=62|issue=3–4|pages=345–373|doi=10.1007/BF00683469|issn=0022-2291|bibcode=1986JLTP...62..345A}}</ref> A couple of years later, T. Fulton and G. Dolan at Bell Labs in the US fabricated and demonstrated how such a device works.<ref>{{cite web|url=https://physicsworld.com/a/single-electron-transistors/|title=Single-electron transistors|date=1998-09-01|access-date=2019-09-17|publisher=Physics World}}</ref> In 1992
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