Single-electron transistor: Difference between revisions

Revision as of 08:02, 19 September 2019

Revision as of 08:10, 19 September 2019

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When [[David Thouless]] pointed out in 1977 that the size of a conductor, if made small enough, will affect the electronic properties of the conductor, a new subfield of condensed matter physics was started.<ref>{{cite journal |last1=Thouless |first1=David J. |authorlink=David J. Thouless| title=Maximum Metallic Resistance in Thin Wires |journal=Phys. Rev. Lett. |volume=39 |issue=18 |pages=1167-1169 |year=1977 |doi=10.1103/PhysRevLett.39.1167| url=https://link.aps.org/doi/10.1103/PhysRevLett.39.1167}}</ref> The research that followed during the 1980s was known as the [[mesoscopic physics]], based on the submicron-size systemsystems investigated.<ref>{{cite journal|last1=Al'Tshuler|first1=Boris L.|last2=Lee|first2=Patrick A.|title=Disordered electronic systems|journal=Physics Today|volume=41|issue=12|year=1988|pages=36-44|doi=10.1063/1.881139}}</ref> This was the starting point of the research related to the single-electron transistor.

The first single-electron transistor based on the Coulomb blockade was reported in 1986 by Soviet scientists {{ill|K. K. Likharev|ru|Лихарев, Константин Константинович}} and D. V. Averin.<ref name=":1">{{Cite journal|last=Averin|first=D. V.|last2=Likharev|first2=K. K.|date=1986-02-01|title=Coulomb blockade of single-electron tunnelling, and coherent oscillations in small tunnel junctions|journal=Journal of Low Temperature Physics|language=en|volume=62|issue=3–4|pages=345–373|doi=10.1007/BF00683469|issn=0022-2291|bibcode=1986JLTP...62..345A}}</ref> A couple of years later, T. Fulton and G. Dolan at Bell Labs in the US fabricated and demonstrated how such a device works.<ref>{{cite web|url=https://physicsworld.com/a/single-electron-transistors/|title=Single-electron transistors|date=1998-09-01|access-date=2019-09-17|publisher=Physics World}}</ref> In 1992 [[Marc A. Kastner]] demonstrated the importance of the [[energy levels]] of the quantum dot.<ref>{{cite journal|last1=Kastner|first1=M. A.|date=1992-07-01|title=The single-electron transistor|journal=Rev. Mod. Phys.|volume=64|issue=3|pages=849-858|doi=10.1103/RevModPhys.64.849}}</ref> In the late 1990s and early 2000s, Russian physicists S. P. Gubin, V. V. Kolesov, E. S. Soldatov, A. S. Trifonov, V. V. Khanin, G. B. Khomutov, and S. A. Yakovenko were the first ones to ever make a molecule based SET operational at room temperature.<ref>{{cite journal|last1=Gubin|first1=S. P.|last2=Gulayev|first2=Yu V.|last3=Khomutov|first3=G. B.|last4=Kislov|first4=V. V.|last5=Kolesov|first5=V. V.|last6=Soldatov|first6=E. S.|last7=Sulaimankulov|first7=K. S.|last8=Trifonov|first8=A. S.|title=Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperature|doi=10.1088/0957-4484/13/2/311|journal=Nanotechnology|year=2002|pages=185-194|volume=13|issue=2}}.</ref>

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