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=== Implantation ===
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During implantation, a radioactive ion beam is generated, which is directed onto the sample material. Due to the kinetic energy of the ions (1-500 keV) these fly into the crystal lattice and are slowed down by impacts. They either come to a stop at interstitial sites or push a lattice-atom out of its place and replace it. This leads to a disruption of the crystal structure. These disorders can be investigated with PAC. By tempering these disturbances can be healed. If, on the other hand, radiation defects in the crystal and their healing are to be examined, unperseived samples are measured, which are then annealed step by step.
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