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Guy Harris (talk | contribs) →Ferroelectric RAM: Clean up another reference, and use the Wayback Machine to fix a dead link. |
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===Ferroelectric RAM===
To date, the only such system to enter widespread production is [[ferroelectric RAM]], or F-RAM (sometimes referred to as FeRAM). F-RAM is a [[random-access memory]] similar in construction to [[Dynamic Random Access Memory|DRAM]] but (instead of a [[dielectric]] layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O<sub>3</sub>], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high endurance (exceeding 10<sup>16</sup> access cycles for 3.3 V devices), ultra low power consumption (since F-RAM does not require a charge pump like other non-volatile memories), single-cycle write speeds, and gamma radiation tolerance.<ref>{{cite web|url=http://www.ramtron.com/about-us/what-is-f-ram.aspx |title=F-RAM Memory Technology
===Magnetoresistive RAM===
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