Non-volatile random-access memory: Difference between revisions

Revision as of 00:58, 17 January 2020

Revision as of 22:50, 21 January 2020

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Another solid-state technology to see more than purely experimental development is [[Phase-change RAM]], or PRAM. PRAM is based on the same storage mechanism as writable [[Compact Disk|CDs]] and [[DVD]]s, but reads them based on their changes in electrical resistance rather than changes in their optical properties. Considered a "dark horse" for some time, in 2006 [[Samsung]] announced the availability of a 512 Mbit part, considerably higher capacity than either MRAM or FeRAM. The areal density of these parts appears to be even higher than modern flash devices, the lower overall storage being due to the lack of multi-bit encoding. This announcement was followed by one from [[Intel]] and [[STMicroelectronics]], who demonstrated their own PRAM devices at the 2006 [[Intel Developer Forum]] in October.

[[Intel]] and [[STMicroelectronics]] are now selling PRAM based devices to consumers, under the names [[3D_XPoint|3D XPoint]] Optane, and QuantX <ref>{{cite web |url=https://pcper.com/2017/06/how-3d-xpoint-phase-change-memory-works/}}</ref>.

===Millipede memory===