Deep reactive-ion etching: Difference between revisions

Revision as of 18:35, 18 January 2020

Revision as of 21:26, 18 February 2020

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* in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm.

* in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes.<ref>{{cite journal | last1= Ghoneim | first1= Mohamed | last2 = Hussain | first2= Muhammad | title = Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics| journal= Small | date= 1 February 2017 | doi=10.1002/smll.201601801 | pmid= 28145623 | volume=13 | issue= 16 | page=1601801| hdl= 10754/622865 | url= https://repository.kaust.edu.sa/bitstream/10754/622865/1/smll.201601801_R2.pdf }}</ref><ref>{{cite news | last= Mendis | first= Lakshini | title= Lego-like Electronics | newspaper= Nature Middle East | date= 14 February 2017 | doi= 10.1038/nmiddleeast.2017.34 }}</ref><ref>{{cite news | last= Berger | first= Michael | title=Lego like silicon electronics fabricated with hybrid etching masks | newspaper= Nanowerk | date= 6 February 2017 | url= http://www.nanowerk.com/spotlight/spotid=45763.php}}</ref>

* in flexible electronics, DRIE is used to make traditional monolithic CMOS devices flexible by reducing the thickness of silicon substrates to few to tens of micrometers.<ref>{{ cite journal | last1= Ghoneim | first1= Mohamed | first2=Nasir | last2=Alfaraj | first3=Galo | last3=Torres-Sevilla | first4=Hossain | last4=Fahad | first5=Muhammad | last5=Hussain | title=Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS | journal=IEEE Transactions on Electron Devices | volume= 63 | issue= 7 | pages= 2657–2664 | date= July 2016 | doi=10.1109/ted.2016.2561239| hdl= 10754/610712 | bibcode= 2016ITED...63.2657G }}</ref><ref>{{ cite journal | first1= Mohamed T. | last1= Ghoneim | first2= Muhammad M. | last2= Hussain | title=Review on physically flexible nonvolatile memory for internet of everything electronics | journal= Electronics | volume= 4 | issue= 3 | pages= 424–479 | date=23 July 2015 | arxiv= 1606.08404 | doi= 10.3390/electronics4030424 }}</ref><ref>{{cite journal | first1= Mohamed T. | last1= Ghoneim | first2= Muhammad M. | last2= Hussain | title=Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric | journal=Applied Physics Letters | date=3 August 2015 | doi=10.1063/1.4927913 | volume=107 | issue= 5 | page=052904| hdl= 10754/565819 | url=https://repository.kaust.edu.sa/bitstream/10754/565819/1/1.4927913.pdf | bibcode= 2015ApPhL.107e2904G }}</ref><ref>{{cite journal | first1=Mohamed T. | last1=Ghoneim | first2=Jhonathan P. | last2=Rojas | first3=Chadwin D. | last3=Young | first4=Gennadi | last4=Bersuker | first5=Muhammad M. | last5=Hussain | title=Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon | journal= IEEE Transactions on Reliability | volume=64 | issue=2 | pages=579–585 | date=26 November 2014 | urldoi=https:/10.1109/ieeexploreTR.ieee2014.org/abstract/document/6967871/2371054 }}</ref><ref>{{cite journal | first1=Mohamed T. | last1=Ghoneim | first2=Mohammed A. | last2=Zidan | first3=Mohammed Y. | last3=Alnassar | first4=Amir N. | last4=Hanna | first5=Jurgen | last5= Kosel | first6=Khaled N. | last6=Salama | first7=Muhammad | last7=Hussain | title=Flexible Electronics: Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications | journal=Advanced Electronic Materials | date=15 June 2015 | doi=10.1002/aelm.201500045 | volume=1 | issue=6 | page=1500045}}</ref><ref>{{cite journal | first1=Mohamed T. | last1=Ghoneim |first2=Arwa | last2=Kutbee | first3=Farzan | last3=Ghodsi | first4=G. |last4=Bersuker | first5=Muhammad M. | last5=Hussain | title=Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric | journal= Applied Physics Letters | date=9 June 2014 | doi=10.1063/1.4882647 | volume=104 | issue=23 | page=234104| hdl=10754/552155 | url=http://repository.kaust.edu.sa/kaust/bitstream/10754/552155/1/1.4882647.pdf | bibcode=2014ApPhL.104w4104G }}</ref>

What distinguishes DRIE from RIE is etch depth: Practical etch depths for RIE (as used in [[integrated circuit|IC]] manufacturing) would be limited to around 10&nbsp;µm at a rate up to 1&nbsp;µm/min, while DRIE can etch features much greater, up to 600&nbsp;µm or more with rates up to 20&nbsp;µm/min or more in some applications.

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===Precision Machinery===

DRIE has enabled the use of silicon mechanical components in high-end wristwatches. According to an engineer at [[Cartier (jeweler)|Cartier]], “There is no limit to geometric shapes with DRIE,”.<ref>{{cite news | last = Kolesnikov-Jessop | first = Sonia | title = Precise Future of Silicon Parts Still Being Debated | newspaper = The New York Times | ___location = New York | date = 23 November 2012 | url = https://www.nytimes.com/2012/11/24/fashion/24iht-acaw2-silicon24.html }}</ref> With DRIE it is possible to obtain an [[aspect ratio]] of 30 or more,<ref>{{cite journal | last=Yeom | first=Junghoon | last2=Wu | first2=Yan | last3=Selby | first3=John C. | last4=Shannon | first4=Mark A. | title=Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect | journal=Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | publisher=American Vacuum Society | volume=23 | issue=6 | year=2005 | issn=0734-211X | doi=10.1116/1.2101678 | page=2319| bibcode=2005JVSTB..23.2319Y }}</ref> meaning that a surface can be etched with a vertical-walled trench 30 times deeper than its width.

This has allowed for silicon components to be substituted for some parts which are usually made of steel, such as the [[hairspring]]. Silicon is lighter and harder than steel, which carries benefits but makes the manufacturing process more challenging.