Non-volatile random-access memory: Difference between revisions

Revision as of 19:44, 30 October 2020

Revision as of 09:56, 14 November 2020

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===FeFET memory===

{{main|FeFET memory}}

An alternative application of (hafnium oxide based) [[ferroelectrics]] is [[Fe FET]] based memory, which utilises a ferroelectric between the gate and device of a [[field-effect transistor]]. Such devices are claimed to have the advantage that thethey utilise the same technology as [[HKMG]] (high-L metal gate) based lithography, and scale to the same size as a conventional FET at a given [[process node]]. As of 2017 32Mbit devices have been demonstrated at [[22 nm]].

===Others===